Al2O3 and Y2O3 Thin Films for Active Integrated Optical Waveguide Devices
نویسندگان
چکیده
Al2O3 and Y2O3 are both very promising host materials for active integrated optics applications such as rare-earth ion doped waveguide lasers. In this paper, a reactive co-sputtering process for stable, target condition-independent deposition of Al2O3 layers with high optical quality is discussed. The loss of as-deposited Al2O3 waveguides in the near infrared wavelength range was 0.3 dB/cm. Reactive ion etching of both Al2O3 and Y2O3 thin films for defining channel waveguide structures was investigated and compared using CF4/O2, BCl3, HBr and Cl2 inductively coupled plasmas.
منابع مشابه
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